MOSFET N-Ch 600 Volt 2.0Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 2 A | ||
Resistance Drain-Source RDS (on) : | 2.8 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Technical/Catalog Information | STD2NM60T4 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 2A |
Rds On (Max) @ Id, Vgs | 3.2 Ohm @ 1A, 10V |
Input Capacitance (Ciss) @ Vds | 160pF @ 25V |
Power - Max | 46W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 8.4nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STD2NM60T4 STD2NM60T4 |