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STD2NC70Z-1

Features: ` TYPICAL RDS(on) = 4.1` EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES` 100% AVALANCHE TESTED` VERY LOW GATE INPUT RESISTANCE` GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENTSpecifications Sy...

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SeekIC No. : 004507449 Detail

STD2NC70Z-1: Features: ` TYPICAL RDS(on) = 4.1` EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES` 100% AVALANCHE TESTED` VERY LOW GATE INPUT RESISTANCE` GATE CHARGE MINIMIZEDApplication· SINGLE-...

STD2NC70Z-1 Data Sheet

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Part Number:
STD2NC70Z-1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 4.1
`  EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
`  100% AVALANCHE TESTED
`  VERY LOW GATE INPUT RESISTANCE
`  GATE CHARGE MINIMIZED


Application

·  SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
·  WELDING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
700
V
VDGR Drain-gate Voltage (RGS = 20 k)

700
V
VGS Gate-Source Voltage
±25
V
ID Drain Current (continuous) at TC = 25
2.5
A
ID Drain Current (continuous) at TC = 100
1.45
A
IDM(`) Drain Current (pulsed)
9.2
A
Ptot Total Dissipation at TC = 25
55
W
  Derating Factor
0.44
W/
IGS Gate-source Current (DC)
±50
mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
1.5
KV
dv/dt(1) Peak Diode Recovery voltage slope
3
V/ns
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD 2.3 A, di/dt 100 A/s, VDD V(BR)DSS, Tj TJMAX


Description

The STD2NC70Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested  by a large variety of single-switch applications.




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