Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 1.5 A
Package / Case
: IPAK
Drain-Source Breakdown Voltage
: 450 V
Resistance Drain-Source RDS (on)
: 4.5 Ohms
Features: ` TYPICAL RDS(on) = 4.1
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` NEW HIGH VOLTAGE BENCHMARKApplication· SWITCH MODE LOW POWER SUPPLIES (SMPS)
· LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS)
· LOW POWER BATTERY CHARGERSSpecifications
| Symbol |
Parameter |
Value |
Unit |
|
STD2NC45-1 |
STQ1NC45 |
| VDS |
Collector-Source Voltage (VGS = 0 V) |
450 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
450 |
V |
| VGS |
Gate-Source Voltage |
±30 |
V |
| ID |
Drain Current (continuous) at TC = 25 |
1.5 |
0.5 |
A |
| ID |
Drain Current (continuous) at TC = 100 |
0.95 |
0.315 |
A |
| IDM(`) |
Drain Current (pulsed) |
6 |
2 |
A |
| PTOT |
Total Dissipation at TC = 25 |
30 |
3.1 |
W |
| |
Derating Factor |
0.24 |
0.025 |
W/ |
| dv/dt(1) |
Peak Diode Recovery voltage slope |
3 |
V/ns |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-65 to 150
-65 to 150 |
|
(`) Pulse width limited by safe operatng area.
(1) I
SD 0.5A, di/dt
100A/s, V
DD V
(BR)DSS, T
j T
JMAXDescriptionThe STD2NC45-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing n-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Parameters: | Technical/Catalog Information | STD2NC45-1 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 450V |
| Current - Continuous Drain (Id) @ 25° C | 1.5A |
| Rds On (Max) @ Id, Vgs | 4.5 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 160pF @ 25V |
| Power - Max | 30W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 7nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD2NC45 1
STD2NC451
|
STD2NC45-1 Data Sheet
