MOSFET N-Ch 200 Volt 18 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 18 A | ||
Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Technical/Catalog Information | STD20N20T4 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 18A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 940pF @ 25V |
Power - Max | 90W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 39nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | STD20N20T4 STD20N20T4 497 4330 2 ND 49743302ND 497-4330-2 |