MOSFET N-Ch 650 Volt 12 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | 25 V | Continuous Drain Current : | 12 A | ||
Resistance Drain-Source RDS (on) : | 0.27 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Technical/Catalog Information | STD16N65M5 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 12A |
Rds On (Max) @ Id, Vgs | 299 mOhm @ 6A, 10V |
Input Capacitance (Ciss) @ Vds | 1250pF @ 100V |
Power - Max | 90W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 45nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STD16N65M5 STD16N65M5 497 8774 6 ND 49787746ND 497-8774-6 |