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STD12NF06-1

MOSFET N-Ch 60 Volt 12 Amp

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SeekIC No. : 00163357 Detail

STD12NF06-1: MOSFET N-Ch 60 Volt 12 Amp

STD12NF06-1 Data Sheet

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Part Number:
STD12NF06-1
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.1 Ohms


Parameters:

Technical/Catalog InformationSTD12NF06-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs100 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 315pF @ 25V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs12nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD12NF06 1
STD12NF061



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