STD10PF06-1, US $ .33-.35 , STMicroelectronics, STD10PF06-1 DataSheet download, circuit diagram from SeekIC.com

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STD10PF06-1: MOSFET P-Ch 60 Volt 10 Amp

STD10PF06-1 Data Sheet

US $ .33~.35 / Piece | Get Latest Price

Part Number:: STD10PF06-1
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	10 A
Resistance Drain-Source RDS (on) :	0.18 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : - 60 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.18 Ohms

Parameters:

Technical/Catalog Information	STD10PF06-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	200 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	850pF @ 25V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	21nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD10PF06 1 STD10PF061

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STD10PF06-1

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