STD100N3LF3

MOSFET N Ch 30V 0.0045 Ohm 80A

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SeekIC No. : 00156352 Detail

STD100N3LF3: MOSFET N Ch 30V 0.0045 Ohm 80A

floor Price/Ceiling Price

US $ .47~.55 / Piece | Get Latest Price
Part Number:
STD100N3LF3
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1660
  • 1660~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.55
  • $.48
  • $.48
  • $.47
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms


Features:

Type VDSSS RDS(on) ID Pw
STD100N3LF3 30 V <0.0055 80 A(1) 110 W
STU100N3LF3 30 V <0.0055 80 A(1) 110 W

1. Current limited by package
100% avalanche tested
Logic level threshold

 




Application

Switching application


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
ID (1) Drain current (continuous) at TC = 25 80 A
ID Drain current (continuous) at TC = 100 70 A
IDM (2) Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 110 W
  Derating factor 0.73 W/
dv/dt (3) Peak diode recovery voltage slope 3.9 V/ns
Tstg

TJ
Storage temperature

Max. operating junction temperature
-55 to 175


1. Current limited by package.
2. Pulse width limited by safe operating area
3. ISD 80A, di/dt 360 A/s, VDS V(BR)DSS, TJ TJMAX




Description

This STD100N3LF3 Power MOSFET is the latest refinement of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters.




Parameters:

Technical/Catalog InformationSTD100N3LF3
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 2060pF @ 25V
Power - Max110W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs27nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD100N3LF3
STD100N3LF3



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