STD100N03LT4

MOSFET N-Ch 30 V 0.0045 Ohm 80 A Planar STripFET

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SeekIC No. : 00160894 Detail

STD100N03LT4: MOSFET N-Ch 30 V 0.0045 Ohm 80 A Planar STripFET

floor Price/Ceiling Price

Part Number:
STD100N03LT4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 80 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.0055 Ohms


Specifications

  Connection Diagram


Description

The STD100N03LT4 is designed as one kind of N-channel 30V - 0.0045 - 80A DPAK IPAK planar STripFET power MOSFET device that shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility.

Features of the STD100N03LT4 are:100% avalanche tested surface-mounting dpak (TO-252) logic level threshold. And this device can be used in (1)high current, high switching dc-dc converter; (2)automotive applications.

The absolute maximum ratings of the STD100N03LT4 can be summarized as:(1)Drain-source Voltage (VGS = 0): 30 V;(2)Drain-gate Voltage: 30 V;(3)Gate- source Voltage: +/-20 V;(4)Drain Current (continuos) at TC = 25°C: 80 A;(5)Drain Current (continuos) at TC = 100°C: 70 A;(6)Drain Current (pulsed): 320 A;(7)Total Dissipation at TC = 25°C: 110 W;(8)Peak Diode Recovery voltage slope: 3.9 V/ns;(9)Operating Junction Temperature: -55 to 175 °C;(10)Storage Temperature: -55 to 175 °C. If you want to know more information about the STD100N03LT4, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationSTD100N03LT4
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 2060pF @ 25V
Power - Max110W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs27nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD100N03LT4
STD100N03LT4
497 4749 1 ND
49747491ND
497-4749-1



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