Position: Home  > All Categories> Integrated Circuits (ICs) > STC03DE170HV

STC03DE170HV

Transistors Bipolar (BJT) Hybrid emiter switch bipolar transistor

product image

STC03DE170HV Picture
See larger image
SeekIC No. : 00209912 Detail

STC03DE170HV: Transistors Bipolar (BJT) Hybrid emiter switch bipolar transistor

STC03DE170HV Data Sheet

floor Price/Ceiling Price

US $ 2.63~3.06 / Piece | Get Latest Price
Part Number:
STC03DE170HV
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~402
  • 402~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $3.06
  • $2.89
  • $2.72
  • $2.63
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Packaging : Tube    

Description

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Tube


Features:

· Low equivalent on resistance
· Very fast-switch, up to 150 kHz
· Squared RBSOA, up to 1700 V
· Very low CISS driven by RG = 47 Ω
· In compliance with the 2002/93/EC European Directive


Application

· Aux SMPS for three phase mains


Specifications

Symbol Parameter
Value
Unit
VCS(SS) Collector-source voltage (VBS =VGS =0V)
1700
V
VBS(OS) Base-source voltage (IC =0, VGS =0V)
30
V
VSB(OS) Source-base voltage (IC =0, VGS =0V)
9
V
VGS Gate-source voltage
± 20
V
IC Collector current
3
A
ICM Collector peak current (tP < 5ms)
6
A
IB Base current
2
A
IBM Base peak current (tP < 1ms)
4
A
Ptot Total dissipation at Tc 25°C
100
W
Tstg Storage temperature
-40 to 150
°C
Tj Max. operating junction temperature
125
°C



Description

The STC03DE170HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology.

The STC03DE170HV is designed for use in aux flyback smps for any three phase application.




Parameters:

Technical/Catalog InformationSTC03DE170HV
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
ApplicationsGate Driver
Transistor TypeNPN - Emitter Switched Bipolar
Voltage - Rated 1700V (1.7kV)
Current Rating3A
Package / CaseTO-247
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STC03DE170HV
STC03DE170HV
497 6273 5 ND
49762735ND
497-6273-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Isolators
HCPL062N
HCPL316J
Discrete Semiconductor Products
T508N12TOF
MUR20040
Line Protection, Backups
BX0023
A20B-1008-0550
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
View more