Features: · ST13003 SILICON IN TO-92 PACKAGE· MEDIUM VOLTAGE CAPABILITY· LOW SPREAD OF DYNAMIC PARAMETERS· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION· VERY HIGH SWITCHING SPEEDApplication· ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTINGSpecifications Symbol Parameter Value Uni t ...
STBV32: Features: · ST13003 SILICON IN TO-92 PACKAGE· MEDIUM VOLTAGE CAPABILITY· LOW SPREAD OF DYNAMIC PARAMETERS· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION· VERY HIGH SWITCHING SPEEDApplication· ELEC...
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· ST13003 SILICON IN TO-92 PACKAGE
· MEDIUM VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION
· VERY HIGH SWITCHING SPEED
· ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
Symbol |
Parameter |
Value |
Uni t |
VCES |
Collector-Emit ter Voltage (VBE = 0) |
700 |
V |
VCEO |
Collector-Emit ter Voltage (IB = 0) |
400 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
9 |
V |
IC |
Collector Current |
1.5 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
3 |
A |
IB |
Base Current |
0.75 |
A |
IBM |
Base Peak Current (tp < 5 ms) |
1.5 |
A |
Ptot |
Total Dissipation at Tc = 25 |
1.1 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |
The device STBV32 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
STBV32 uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STBV32 is designed for use in compact fluorescent lamp application.