STB75N20

MOSFET POWER MOSFET

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STB75N20 Picture
SeekIC No. : 00166631 Detail

STB75N20: MOSFET POWER MOSFET

floor Price/Ceiling Price

Part Number:
STB75N20
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.034 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.034 Ohms


Parameters:

Technical/Catalog InformationSTB75N20
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs34 mOhm @ 37A, 10V
Input Capacitance (Ciss) @ Vds 3260pF @ 25V
Power - Max190W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs84nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB75N20
STB75N20
497 5313 1 ND
49753131ND
497-5313-1



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