Features: · TYPICAL RDS(on) = 0.01 W @4.5V· OPTIMAL RDS(on)x Qg TRADE-OFF@ 4.5V· CONDUCTION LOSSESREDUCED· SWITCHING LOSSESREDUCEDApplication· SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecifications Symbol Parameter Value Uni t VDS Drai...
STB70NF3LL: Features: · TYPICAL RDS(on) = 0.01 W @4.5V· OPTIMAL RDS(on)x Qg TRADE-OFF@ 4.5V· CONDUCTION LOSSESREDUCED· SWITCHING LOSSESREDUCEDApplication· SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY C...
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· TYPICAL RDS(on) = 0.01 W @4.5V
· OPTIMAL RDS(on)x Qg TRADE-OFF@ 4.5V
· CONDUCTION LOSSESREDUCED
· SWITCHING LOSSESREDUCED
· SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS
Symbol |
Parameter |
Value |
Uni t |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
30 |
V |
VGS |
Gate-source Voltage |
± 15 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
70 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
50 |
A |
IDM(•) |
Drain Current (pulsed) |
280 |
A |
Ptot |
Total Dissipation at Tc = 25 |
100 |
W |
Derating Factor |
0.67 |
W/ | |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
175 |
(•) Pulse width limited by safe operating area
This application specific Power Mosfet STB70NF3LL is the third generation of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conductionand switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.