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STB70NF02L

Features: · TYPICAL RDS(on) = 0.006 W· TYPICAL Qg = 36 nC @ 10V· OPTIMAL RDS(on) x Qg TRADE-OFF· CONDUCTION LOSSESREDUCED· SWITCHING LOSSESREDUCEDApplication· SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecifications Symbol Parameter Value Uni ...

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SeekIC No. : 004507228 Detail

STB70NF02L: Features: · TYPICAL RDS(on) = 0.006 W· TYPICAL Qg = 36 nC @ 10V· OPTIMAL RDS(on) x Qg TRADE-OFF· CONDUCTION LOSSESREDUCED· SWITCHING LOSSESREDUCEDApplication· SPECIFICALLYDESIGNED AND OPTIMISEDFOR H...

STB70NF02L Data Sheet

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Part Number:
STB70NF02L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

·  TYPICAL RDS(on) = 0.006 W
·  TYPICAL Qg = 36 nC @ 10V
·  OPTIMAL RDS(on) x Qg TRADE-OFF
·  CONDUCTION LOSSESREDUCED
·  SWITCHING LOSSESREDUCED




Application

·  SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS




Specifications

Symbol
Parameter
Value
Uni t
VDS
 Drain-source Voltage (VGS = 0)
20
V
VDGR
 Drain- gate Voltage (RGS = 20 kW)
20
V
VGS
 Gate-source Voltage
± 20
V
ID
 Drain Current (continuous) at Tc = 25
70
A
ID
 Drain Current (continuous) at Tc = 100
50
A
IDM(•)
 Drain Current (pulsed)
280
A
Ptot
 Total Dissipation at Tc = 25
100
W
 Derating Factor
0.67
W/
Tstg
 Storage Temperature
-65 to 150
Tj
 Max. Operating Junction Temperature
175

(•) Pulse width limited by safe operating area




Description

This application specific Power Mosfet is the third generation of STB70NF02L STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conductionand switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.




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