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STB60NE06L-16T4

MOSFET N-Ch 60 Volt 60 Amp

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SeekIC No. : 00162479 Detail

STB60NE06L-16T4: MOSFET N-Ch 60 Volt 60 Amp

STB60NE06L-16T4 Data Sheet

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Part Number:
STB60NE06L-16T4
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.012 Ohms


Parameters:

Technical/Catalog InformationSTB60NE06L-16T4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs14 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 4150pF @ 25V
Power - Max150W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs70nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB60NE06L 16T4
STB60NE06L16T4



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