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STB141NF55-1

MOSFET N-Ch, 55V-0.0065ohms 80A

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STB141NF55-1: MOSFET N-Ch, 55V-0.0065ohms 80A

STB141NF55-1 Data Sheet

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Part Number:
STB141NF55-1
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.008 Ohms


Parameters:

Technical/Catalog InformationSTB141NF55-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs8 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 5300pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs142nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB141NF55 1
STB141NF551



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