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STB13NM50N-1

MOSFET N Ch 600V 6A Hyper fast IGBT

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SeekIC No. : 00163237 Detail

STB13NM50N-1: MOSFET N Ch 600V 6A Hyper fast IGBT

STB13NM50N-1 Data Sheet

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Part Number:
STB13NM50N-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.32 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 12 A
Package / Case : I2PAK
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.32 Ohms


Parameters:

Technical/Catalog InformationSTB13NM50N-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs320 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 960pF @ 50V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB13NM50N 1
STB13NM50N1



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