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STB130NS04ZBT4: MOSFET N Ch CLAMPED 8mOhm 80A

STB130NS04ZBT4 Data Sheet

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Part Number:: STB130NS04ZBT4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/4

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DescriptionThe STB100NF03L-03-01 is the latest development of STMicroelectronis unique Single Fea...
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US $1.01 - 1.37 / Piece

MOSFET N-Ch 30 Volt 100 Amp

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	33 V
Gate-Source Breakdown Voltage :	18 V	Continuous Drain Current :	80 A
Resistance Drain-Source RDS (on) :	0.009 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.009 Ohms
Gate-Source Breakdown Voltage : 18 V
Drain-Source Breakdown Voltage : 33 V

Parameters:

Technical/Catalog Information	STB130NS04ZBT4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	33V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	9 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	2700pF @ 25V
Power - Max	300W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB130NS04ZBT4 STB130NS04ZBT4

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STB130NS04ZBT4

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