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STB12NM50FDT4

MOSFET N-Ch 500 Volt 12 Amp

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SeekIC No. : 00160309 Detail

STB12NM50FDT4: MOSFET N-Ch 500 Volt 12 Amp

STB12NM50FDT4 Data Sheet

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Part Number:
STB12NM50FDT4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Parameters:

Technical/Catalog InformationSTB12NM50FDT4
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs400 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 25V
Power - Max160W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs12nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB12NM50FDT4
STB12NM50FDT4
497 5380 6 ND
49753806ND
497-5380-6



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