MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
STB11NM80T4: MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
DescriptionThe STB100NF03L-03-01 is the latest development of STMicroelectronis unique Single Fea...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 11 A | ||
Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB11NM80T4 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 5.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1630pF @ 25V |
Power - Max | 150W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 43.6nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB11NM80T4 STB11NM80T4 497 4319 2 ND 49743192ND 497-4319-2 |