TRANSISTOR NPN ISOWATT218FX
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Series: | - | Manufacturer: | STMicroelectronics | ||
Transistor Type: | NPN | Current - Collector (Ic) (Max): | 7A | ||
Voltage - Collector Emitter Breakdown (Max): | 600V | Resistor - Base (R1) (Ohms): | - | ||
Vce Saturation (Max) @ Ib, Ic: | 3V @ 800mA, 4A | Current - Collector Cutoff (Max): | 1mA | ||
Resistor - Emitter Base (R2) (Ohms): | - | DC Current Gain (hFE) (Min) @ Ic, Vce: | 4.5 @ 5A, 5V | ||
Series : | ESD5V0S | Power - Max: | 50W | ||
Frequency - Transition: | - | Mounting Type: | Through Hole | ||
Package / Case: | ISOWATT218FX | Supplier Device Package: | ISOWATT-218FX |
Symbol | Parameter |
Value |
Unit |
VCBO | Collector-Base Voltage (IE = 0) |
1150 |
V |
VCEO | Collector-Emitter Voltage (IB = 0) |
600 |
V |
VEBO | Emitte-Base Voltage (IC = 0) |
15 |
V |
IC | Collector Current |
7 |
A |
ICM | Collector Peak Current (tP < 5ms) |
12 |
A |
IB | Base Current |
4 |
A |
PTOT | Total dissipation at Tc = 25°C |
50 |
W |
Visol | Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink |
2500 |
V |
Tstg | Storage Temperature |
-65 to 150 |
°C |
Tj | Max. Operating Junction Temperature |
150 |
°C |
The ST8812FX is manufactured using latest Multi Epitaxial Planar technology with high voltage capability. It shows wide R.B.S.O.A. and high switching speed thanks to its Cellular Emitter structure with planar edge termination and deep base diffusion.