ST83003

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 400 V
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
Emitter- Base Voltage VEBO : 12 V
DC Collector/Base Gain hfe Min : 10
Package / Case : SOT-32


Features:

·MEDIUM VOLTAGE CAPABILITY
·LOW SPREAD OF DYNAMIC PARAMETERS
·MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
·VERY HIGH SWITCHING SPEED


Application

·ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
·SWITCH MODE POWER SUPPLIES


Specifications

Symbol	Parameter	Value	Unit
VCBS	Collector-Base Voltage(VBE=0)	700	V
VCEO	Collector-Emitter Voltage(IB=0)	400	V
VEBO	Emitter-Base Voltage (IC = 0, IB = 0.75 A, tp < 10ms, Tj < 150)	V(BR)EBO	V
IC	Device Current	1.5	A
ICM	Collector Peak Current (tp < 5 ms)	3	A
IB	Base Current	0.75	A
IBM	Base Peak Current (tp < 5 ms)	1.5	A
Ptot	Total Dissipation at Tc = 25	40	W
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The ST83003 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The ST83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the ST93003, its complementary PNP transistor.

Parameters:

Technical/Catalog Information	ST83003
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Current - Collector (Ic) (Max)	1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce	16 @ 350mA, 5V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Gain	-
Power - Max	40W
Compression Point (P1dB)	-
Package / Case	SOT-32-3, TO-126-3
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ST83003 ST83003