TRANSISTOR PWR NPN ISOWATT218FX
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Features: ·ANSI C compiler (X3.159-1989).·Excellent compile time diagnostics.·Global and local opt...
Series: | - | Manufacturer: | STMicroelectronics | ||
Transistor Type: | NPN | Current - Collector (Ic) (Max): | 10A | ||
Voltage - Collector Emitter Breakdown (Max): | 600V | Resistor - Base (R1) (Ohms): | - | ||
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1.25A, 5A | Current - Collector Cutoff (Max): | 1mA | ||
Resistor - Emitter Base (R2) (Ohms): | - | Series : | ESD5V0S | ||
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5 @ 6A, 5V | Power - Max: | 63W | ||
Frequency - Transition: | - | Mounting Type: | Through Hole | ||
Package / Case: | ISOWATT218FX | Supplier Device Package: | ISOWATT-218FX |
Symbol | Parameter |
Value |
Unit |
VCBO | Collector-Base Voltage(IE=0) |
1500 |
V |
VCEO | Collector-Emitter Voltage(IB=0) |
600 |
V |
VEBO | Emitter-Base Voltage(IC=0) |
7 |
V |
IC | Device Current |
10 |
A |
ICM | Collector Peak Current (tp < 5 ms) |
20 |
A |
IB | Base Current |
7 |
A |
Ptot | Total Dissipation at Tc = 25 |
63 |
W |
Vins | Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink |
2500 |
V |
Tstg | Storage Temperature |
65 to 150 |
|
Tj | Max. Operating Junction Temperature |
150 |
The device ST2001FX is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
Technical/Catalog Information | ST2001FX |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 63W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 6A, 5V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.25A, 5A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 1mA |
Mounting Type | Through Hole |
Package / Case | ISOWATT218FX |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ST2001FX ST2001FX |