Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
ST1802HI: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 600 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 10 A |
DC Collector/Base Gain hfe Min : | 4 | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-93 |
Packaging : | Tube |
Symbol | Parameter | Value | Uni t |
VCBO | Collector-Base Voltage (IE = 0) | 1500 | V |
VCEO | Collector-Emit ter Voltage (IB = 0) | 600 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 7 | V |
IC | Collector Current | 10 | A |
ICM | Collector Peak Current (tp < 5 ms) | 15 | A |
IB | Base Current | 4 | A |
Ptot | Total Dissipation at Tc = 25 oC | 50 | W |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
The device ST1802HI is manufactured using Diffused Collector Technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
Technical/Catalog Information | ST1802HI |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 50W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 5V |
Vce Saturation (Max) @ Ib, Ic | 5V @ 800mA, 4A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 1mA |
Mounting Type | Through Hole |
Package / Case | ISOWATT-218-3 |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | ST1802HI ST1802HI 497 3150 5 ND 49731505ND 497-3150-5 |