ST1000EX21

The ST1000EX21 is a kind of insulated gate bipolar transistor. It is designed for high power switching applications and motor control applications. There are some features as follows: (1)all electric contacts by pressure structure and airtight package; (2)anti-parallel fast recovery diode in this package; (3)enhancement mode IGBT.

The following is about the maximum ratings (Ta=25) of the ST1000EX21: (1)collector-emitter voltage, VCES: 2500 V; (2)gate-emitter voltage, VGES: ±20 V; (3)collector current, IC: 1000 A when DC and 2000 A when 1 ms pulse; (4)collector current, IF: 1000 A when DC and 2000 A when 1 ms pulse; (5)collector power dissipation (Tc=25), PC: 5550 W; (6)operating junction temperature, Tj: -20 to 125; (7)storage temperature range, Tstg: -40 to 125.

The  last one is about the eletrical characteristics (Tc=125 without Rth) of the ST1000EX21: (1)gate leakage current, IGES: ±1A max when VGE=±20 V, VCE=0 V; (2)collector cutoff current, ICES: 200 mA max when VGE=2500 V, VGE=0 V; (3)gate-emitter cutoff voltage, VGE(off): 3.0 V min, 4.5 V typ and 6.0 V max when VCE=5 V, IC=1 A; (4)collector-emitter saturation voltage, VCE(sat): 5.5 V typ and 6.0 V max at IC=1000 A, VGE=15 V; (5)input capacitance, Cies: 170 pF typ at VCE=10 V, VGE=0 V, f=1 MHz; (6)forward voltage of diode, VF: 2.7 V typ and 3.2 V max at IF=1000 A, VGE=0 V; (7)thermal resistance, transistor part: Rth(j-f) E (junction-emitter side): 47.5/kW max; Rth(j-f) C (junction-collector side): 29.0/kW max; Rth(j-f) D (junction-double side): 18.0/kW max  ; (8)thermal resistance, diode part: Rth(j-f) A (junction-anode side): 125/kW max; Rth(j-f) K (junction-cathode side) of the ST1000EX21: 70.3/kW max; Rth(j-f) D (junction-double side): 45.0/kW max.