Flash 16M (1Mx16) 70ns Commercial Temp
SST39VF1601-70-4C-EK: Flash 16M (1Mx16) 70ns Commercial Temp
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Data Bus Width : | 16 bit | Memory Type : | NOR |
Memory Size : | 16 Mbit | Architecture : | Sectored |
Interface Type : | CFI | Access Time : | 70 ns |
Supply Voltage - Max : | 3.6 V | Supply Voltage - Min : | 2.7 V |
Maximum Operating Current : | 18 mA | Operating Temperature : | + 70 C |
Mounting Style : | SMD/SMT | Package / Case : | TSOP-48 |
Packaging : | Tray |
The SST39VF1601-70-4C-EK devices is 1M x16, 2M x16, and 4M x16 respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary,high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601-70-4C-EK write (Program or Erase) with a 2.7-3.6V power supply.These devices conform to JEDEC standard pinouts for x16 memories.
Featuring high performance Word-Program, the SST39VF1601-70-4C-EK devices provide a typical Word-Program time of 7 sec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation.To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes.Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.The SST39VF1601-70-4C-EK devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application.Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies.These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.