SST28VF040A

The SST28VF040A are 512K x8 bit CMOS Sector- Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST's proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry standard flash EEPROM pinouts.

Featuring high performance programming, the SST28VF040A typically Byte-Program in 35 µs. The SST28SF/ VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/ VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years.

The SST28VF040A are best suited for applications that require reprogrammable nonvolatile mass storage of program, configuration, or data memory. For all system applications, the SST28SF/VF040A significantly improve performance and reliability, while lowering power consumption when compared with floppy diskettes or EPROM approaches. Flash EEPROM technology makes possible convenient and economical updating of codes and control programs on-line. The SST28SF/VF040A improve flexibility, while lowering the cost of program and configuration storage application.

The functional block diagram shows the functional blocks of the SST28VF040A. Figures 1, 2, and 3 show the pin assignments for the 32-lead PLCC, 32-lead TSOP, and 32- pin PDIP packages. Pin descriptions and operation modes are described in Tables 2 through 5.