SST27SF512-70-3C-NH

Timing Type :
Access Time : 70 ns
Maximum Operating Current : 30 mA
Mounting Style : SMD/SMT
Packaging : Tube
Memory Type : NOR
Data Bus Width : 8 bit
Operating Temperature : + 70 C
Interface Type : Parallel
Supply Voltage - Max : 5.5 V
Supply Voltage - Min : 4.5 V
Package / Case : PLCC-32
Architecture : Non Sectored
Memory Size : 512 Kbit


Description

The SST27SF512-70-3C-NH belongs to SST27SF256/512/010/020 family which are a 32K*8 /64K*8 / 128*K8 / 256K*8 CMOS, Many-Time Programmable (MTP) low cost flash, manufactured with SST's proprietary, high performance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external pro- grammer with a 12 volt power supply. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs. They have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide memories. To meet surface mount and conventional through hole requirements, the SST27SF256/512 are offered in 32-pin PLCC, 32-pin TSOP, and 28-pin PDIP packages. The SST27SF010/020 are offered in 32-pin PDIP, 32-pin PLCC and 32-pin TSOP packages. See Figures 1, 2, and 3 for pinouts. Featuring high performance Byte-Program, the SST27SF256/512/010/020 provide a Byte-Program time of 20 s. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years. The SST27SF256/512/010/020 are suited for applications that require infrequent writes and low power nonvolatile storage.

The features of SST27SF512-70-3C-NH can be summarized as (1)organized as 32K x8 / 64K x8 / 128K x8 / 256K x8; (2)4.5-5.5V read operation; (3)superior reliability endurance: at least 1000 cycles greater than 100 years data retention; (4)low power consumption active current: 20 mA (typical) standby current: 10 A (typical); (5)fast read access time 70 ns 90 ns; (6)fast byte-program operation byte-program time: 20 s (typical) chip program time: 0.7 seconds (typical) for SST27SF256, 1.4 seconds (typical) for SST27SF512, 2.8 seconds (typical) for SST27SF010, 5.6 seconds (typical) for SST27SF020; (7)electrical erase using programmer does not require UV source chip-erase time: 100 ms (typical); (8)TTL I/O compatibility; (9)JEDEC standard byte-wide EPROM pinouts; (10)packages available 32-pin PLCC 32-pin TSOP (8mm x 14mm) 28-pin PDIP for SST27SF256/512 32-pin PDIP for SST27SF010/020.

The absolute maximum ratings of SST27SF512-70-3C-NH are (1)temperature under bias: -55°C to +125°C; (2)storage temperature: -65°C to +150°C; (3)D. C. voltage on any pin to ground potential: -0.5V to VDD+0.5V; (4)transient voltage (<20 ns) on any pin to ground potential: -1.0V to VDD+1.0V; (5)voltage on A9 and VPP pin to ground potential: -0.5V to 14.0V; (6)package power dissipation capability (Ta = 25°C): 1.0W; (7)through hold lead soldering temperature (10 Seconds): 300°C; (8)surface mount lead soldering temperature (3 Seconds): 240°C; (9)output short circuit current1: 100 mA(1. Outputs shorted for no more than one second. No more than one output shorted at a time.).