MOSFET Trans N-Ch 600V 0.9A 3Pin 2+Tab
SSR1N60BTM_F080: MOSFET Trans N-Ch 600V 0.9A 3Pin 2+Tab
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Features: ·This series is offered in both 6 & 8 in DIP packages. Typical applications are data...
Features: ·This series is offered in both 6 & 8 in DIP packages. Typical applications are data...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.9 A | ||
Resistance Drain-Source RDS (on) : | 12 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Technical/Catalog Information | SSR1N60BTM_F080 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 900mA |
Rds On (Max) @ Id, Vgs | 12 Ohm @ 450mA, 10V |
Input Capacitance (Ciss) @ Vds | 215pF @ 25V |
Power - Max | 2.5W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 7.7nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SSR1N60BTM_F080 SSR1N60BTM_F080 |