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SSR1N60BTM

MOSFET N-Ch/600V/0.9a/12Ohm

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SeekIC No. : 00162958 Detail

SSR1N60BTM: MOSFET N-Ch/600V/0.9a/12Ohm

SSR1N60BTM Data Sheet

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Part Number:
SSR1N60BTM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.9 A
Resistance Drain-Source RDS (on) : 12 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-252
Continuous Drain Current : 0.9 A
Resistance Drain-Source RDS (on) : 12 Ohms


Parameters:

Technical/Catalog InformationSSR1N60BTM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C900mA
Rds On (Max) @ Id, Vgs12 Ohm @ 450mA, 10V
Input Capacitance (Ciss) @ Vds 215pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.7nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SSR1N60BTM
SSR1N60BTM



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