SSR1N60A

The SSR1N60A is designed as advanced power MOSFET.

SSR1N60A has seven features. (1)Avalanche rugged technology. (2)Rugged gate oxide technology. (3)Lower input capacitance. (4)Improved gate charge. (5)Extended safe operating area. (6)Lower leakage current which would be max 25uA at Vds=600V. (7)Low Rds(on) would be typ 9.390ohms. Those are all the main features.

Some absolute maximum ratings of SSR1N60A have been concluded into several points as follow. (1)ts drain to source voltage would be 600V. (2)Its continuous drain current would be 0.9A at 25°C and would be 0.57A at 100°C. (3)Its drain current pulsed would be 3A. (4)ts gate to source voltage would be +/-30V. (5)Its single pulsed avalanche energy would be 66mJ. (6)Its avalanche current would be 0.9A. (7)Its repetitive avalanche energy. (8)Its peak diode recovery dv/dt. (9)Its total power dissipation would be 2.5W at Ta=25°C and would be 28W at Tc=25°C and linear derating factor would be 0.22W/°C. (10)Its operating junction and storage temperature range would be from -55°C to +150°C. (11)Its maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of SSR1N60A are concluded as follow. (1)Its drain to source breakdown voltage would be min 600V. (2)Its breakdown voltage temperature coeff. would be typ 0.74V/°C. (3)Its gate threshold voltage would be min 2.0V and max 4.0V. (4)Its gate to source leakage forward would be max 100nA. (5)Its gate to source leakage reverse would be max -100nA. (6)Its drain to source leakage current would be max 25uA at Vds=600V and would be max 250uA at Vds=480V, Tc=125°C. (7)Its input capacitance would be typ 145pF and max 190pF. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!