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SSR1N50B

Features: • 1.3A, 520V, R DS(on) = 5.3Ω @VGS = 10 V• Low gate charge ( typical 8.3 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese SSR1N50B N-Channel enhancement mode power field effect tran...

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SeekIC No. : 004505159 Detail

SSR1N50B: Features: • 1.3A, 520V, R DS(on) = 5.3Ω @VGS = 10 V• Low gate charge ( typical 8.3 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• I...

SSR1N50B Data Sheet

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Part Number:
SSR1N50B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1.3A, 520V, R DS(on) = 5.3Ω @VGS = 10 V
• Low gate charge ( typical 8.3 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Description

These SSR1N50B N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

SSR1N50B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.




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