Features: • 1.3A, 520V, R DS(on) = 5.3Ω @VGS = 10 V• Low gate charge ( typical 8.3 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese SSR1N50B N-Channel enhancement mode power field effect tran...
SSR1N50B: Features: • 1.3A, 520V, R DS(on) = 5.3Ω @VGS = 10 V• Low gate charge ( typical 8.3 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• I...
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Features: ·This series is offered in both 6 & 8 in DIP packages. Typical applications are data...
Features: ·This series is offered in both 6 & 8 in DIP packages. Typical applications are data...
These SSR1N50B N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
SSR1N50B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.