ApplicationSmall PackageLow on Resistance : Ron = 0.4 Ω (max) (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)Low Gate Threshold VoltagePinoutSpecifications Characteristic Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source voltage VGSS ±10 V ...
SSM3J01T: ApplicationSmall PackageLow on Resistance : Ron = 0.4 Ω (max) (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)Low Gate Threshold VoltagePinoutSpecifications Characteris...
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Characteristic | Symbol | Rating | Unit | |
Drain-Source voltage | VDS | -30 | V | |
Gate-Source voltage | VGSS | ±10 | V | |
Drain current | DC | ID | -1.7 | A |
Pulse | IDP (Note 2) | -3.4 | ||
Drain power dissipation (Ta =25°C) | PD (Note 1) | 1250 | mW | |
Channel temperature | Tch | 150 | °C | |
Storage temperature range | Tstg | -55~150 | °C |