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SSM1N45B

Features: 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 VLow gate charge ( typical 6.5 nC)Low Crss ( typical 6.5 pF)100% avalanche testedImproved dv/dt capabilityGate-Source Voltage ± 50V guaranteedSpecifications Symbol Parameter SSM1N45B Units VDSS Drain-Source Voltage 450 V ID Dr...

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SeekIC No. : 004503797 Detail

SSM1N45B: Features: 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 VLow gate charge ( typical 6.5 nC)Low Crss ( typical 6.5 pF)100% avalanche testedImproved dv/dt capabilityGate-Source Voltage ± 50V guaranteedSp...

SSM1N45B Data Sheet

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Part Number:
SSM1N45B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

0.5A, 450V, R DS(on) = 4.25Ω @VGS = 10 V
Low gate charge ( typical 6.5 nC)
Low Crss ( typical  6.5 pF)
100% avalanche tested
Improved dv/dt capability
Gate-Source Voltage  ± 50V guaranteed


Specifications

Symbol Parameter SSM1N45B Units
VDSS Drain-Source Voltage 450 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 0.5 A
0.32 A
IDM Drain Current - Pulsed (Note 1) 4.0 A
VGSS Gate-Source Voltage ± 50 V
EAS Single Pulsed Avalanche Energy (Note 2) 108 mJ
IAR Avalanche Current (Note 1) 0.5 A
EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C) 0.9 W

Power Dissipation (TL = 25°C)
                     - Derate above 25°C

 2.5 W
0.02 W/°C
TJ, TSTG Operating and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel  enhancement  mode  power  field  effect transistors  are  produced  using  Fairchild's  proprietary, planar, DMOS technology.

This advanced technology SSM1N45B has been especially tailored to minimize  on-state  resistance,  provide  superior  switching performance,  and  withstand  high  energy  pulse  in  the avalanche and commutation mode. These devices are well suited  for  electronic  ballasts  based  on  half  bridge configuration.




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