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SSI1N60B

Features: • 1.0A, 600V, R DS(on) = 12Ω @VGS = 10 V• Low gate charge ( typical 5.9 nC)• Low Crss ( typical 3.6 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter SSW1N60B / SSI1N60B Units VDSS Dr...

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SeekIC No. : 004503495 Detail

SSI1N60B: Features: • 1.0A, 600V, R DS(on) = 12Ω @VGS = 10 V• Low gate charge ( typical 5.9 nC)• Low Crss ( typical 3.6 pF)• Fast switching• 100% avalanche tested• Im...

SSI1N60B Data Sheet

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Part Number:
SSI1N60B
Supply Ability:
5000

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Product Details

Description



Features:

• 1.0A, 600V, R DS(on) = 12Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter SSW1N60B / SSI1N60B Units
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 1.0 A
0.6 A
IDM Drain Current - Pulsed (Note 1) 3.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 50 mJ
IAR Avalanche Current (Note 1) 1.0 A
EAR Repetitive Avalanche Energy (Note 1) 3.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C)
 3.13 W
Power Dissipation (TC = 25°C)
                     - Derate above 25°C		 34 W
0.27 W/°C
TJ, TSTG Operating and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel enhancement mode power field effect transistors SSI1N60B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology SSI1N60B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. SSI1N60B is well suited for high efficiency switch mode power supplies.




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