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SSI1N60A

Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 mA (Max.) @ VDS = 600VLow RDS(ON) : 9.390 W (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-Source Vol...

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SeekIC No. : 004503494 Detail

SSI1N60A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 mA (Max.) @ VDS = 600VLow RDS(ON) :...

SSI1N60A Data Sheet

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Part Number:
SSI1N60A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/28

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 600V
Low RDS(ON) : 9.390 W (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 600 V
ID Continuous Drain Current (TC=25 ) 1 A
Continuous Drain Current (TC=100 ) 0.6
IDM Drain Current-Pulsed 3 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 44 mJ
IAR Avalanche Current 1 A
EAR Repetitive Avalanche Energy 3.4 mJ
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
PD Total Power Dissipation (TA=25) 3.1 W
Total Power Dissipation (TC=25 )
Linear Derating Factor		 34
0.27		 W
W/
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=80mH, IAS=1A, VDD=50V, RG=27 , Starting TJ =25
ISD 1A, di/dt 60A/ s, VDD BVDSS , Starting TJ =25


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