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SSI1N50B

Features: • 1.5A, 520V, R DS(on) = 5.3Ω @VGS = 10 V• Low gate charge ( typical 8.3 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter SSW1N50B / SSI1N50B Units VDSS D...

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SeekIC No. : 004503493 Detail

SSI1N50B: Features: • 1.5A, 520V, R DS(on) = 5.3Ω @VGS = 10 V• Low gate charge ( typical 8.3 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• I...

SSI1N50B Data Sheet

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Part Number:
SSI1N50B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1.5A, 520V, R DS(on) = 5.3Ω @VGS = 10 V
• Low gate charge ( typical 8.3 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter SSW1N50B / SSI1N50B Units
VDSS Drain-Source Voltage 520 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 1.5 A
0.97 A
IDM Drain Current - Pulsed (Note 1) 5.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 100 mJ
IAR Avalanche Current (Note 1) 1.5 A
EAR Repetitive Avalanche Energy (Note 1) 3.6 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C)
 3.13 W
Power Dissipation (TC = 25°C)
                         - Derate above 25°C		 36 W/°C
0.29
TJ, TSTG Operating and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel enhancement mode power field effect transistors SSI1N50B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology SSI1N50B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. SSI1N50B is well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.




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