SSI10N60BTU, US $ .64-1.13 , Fairchild Semiconductor, SSI10N60BTU DataSheet download, circuit diagram from SeekIC.com

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SSI10N60BTU: MOSFET 600V Single

SSI10N60BTU Data Sheet

US $ .64~1.13 / Piece | Get Latest Price

Part Number:: SSI10N60BTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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25~100
100~250

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$1.13
$.94
$.76
$.64

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Upload time: 2024/11/28

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What is this?

SSI10N60B evaluate
Features: • 9.0A, 600V, R DS(on) = 0.8Ω @VGS = 10 V• Low gate charge ( typical 5...
SSI1N50B evaluate
Features: • 1.5A, 520V, R DS(on) = 5.3Ω @VGS = 10 V• Low gate charge ( typical 8...
SSI1N50BTU evaluate
US $.26 - .46 / Piece

MOSFET 500V Single

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	9 A
Resistance Drain-Source RDS (on) :	0.8 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	I2PAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : I2PAK
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.8 Ohms

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SSI10N60BTU

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