Application• 600V IGBT Technology• Positive Temperature Coefficient for Ease of Paralleling• High Current Switching for Motor Drives and Inverters• Low Saturation Voltage at High Currents.• Low Switching Losses.• High Short Circuit Capability• MOS Input, V...
SSG60N60: Application• 600V IGBT Technology• Positive Temperature Coefficient for Ease of Paralleling• High Current Switching for Motor Drives and Inverters• Low Saturation Voltage at ...
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MAXIMUM RATINGS | SYMBOL | VALUE | UNITS |
Collector-Emitter Voltage | VCEO | 600 | Volts |
Continuous Collector Current @ TC = 25 Average Diode Current @ TC = 100 |
IC | 85 60 |
Amps |
Peak Collector Current | IC(pk) | 200 | Amps |
Gate Emitter Voltage | VGE | +20 | Volts |
Operating and Storage Temperature | TJ, TSTG | -65 to +200 | |
Total Device Dissipation @ TC = 25 | PD | 350 | W |
Thermal Resistance,N, P Junction to CaseS2 |
RJC | 0.5 0.4 |
/W |