SSD2025TF

MOSFET N-Ch/60V/3.3a 0.1Ohm@VGS=10V

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SSD2025TF Picture
SeekIC No. : 00163936 Detail

SSD2025TF: MOSFET N-Ch/60V/3.3a 0.1Ohm@VGS=10V

floor Price/Ceiling Price

Part Number:
SSD2025TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/2

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.1 Ohms
Continuous Drain Current : 3.3 A


Parameters:

Technical/Catalog InformationSSD2025TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs100 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SSD2025TF
SSD2025TF



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