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SS9013GTA

Transistors Bipolar (BJT) NPN Epitaxial Silicon

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SeekIC No. : 00211782 Detail

SS9013GTA: Transistors Bipolar (BJT) NPN Epitaxial Silicon

SS9013GTA Data Sheet

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Part Number:
SS9013GTA
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 112 at 50 mA at 1 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Ammo    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Ammo
DC Collector/Base Gain hfe Min : 112 at 50 mA at 1 V


Parameters:

Technical/Catalog InformationSS9013GTA
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)500mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce112 @ 50mA, 1V
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SS9013GTA
SS9013GTA



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