SS8550DBU

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 6 V
Mounting Style : Through Hole
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 25 V
Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 85
Packaging : Bulk


Description

The SS8550DBU is designed as one kind of plastic-encapsulate transistor. The absolute maximum ratings of SS8550DBU can be summarized as:(1)Collector-Emitter Voltage: -25 Vdc;(2)Collector-Base Voltage: -40 Vdc;(3)Emitter-Base Voltage: -5.0 Vdc;(4)Collector Current: -1.5 Adc;(5)Total Device Dissipation T =25 : 1.0 W;(6)Junction Temperature: 150 ;(7)Storage Temperature: -55 to +150 .

The electrical characteristics of the SS8550DBU can be summarized as:(1)Collector-Emitter Breakdown Voltage (IC= -0.1 mAdc, IB=0): -25 Vdc;(2)Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0): -40 Vdc;(3)Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0): -5.0 Vdc;(4)Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc): -0.1 uAdc;(5)Emitter Cutoff Current(V = -5 Vdc, I =0 Vdc): -0.1 uAdc. If you want to know more information about SS8550DBU, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	SS8550DBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	1.5A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 80mA, 800mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SS8550DBU SS8550DBU