SS64N55

Features of the SS64N55 are:(1)lower RDS(ON);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysilicon gate cell structure;(5)lower input capacitance;(6)extended safe operating area;(7)improved high temperature reliability.

The absolute maximum ratings of the SS64N55 can be summarized as:(1):the parameter is drain-source voltage,the symbol is VDSS,the rating is 550,the unit is Vdc;(2):the parameter is drain-gate voltage,the symbol is VDGR,the rating is 550,the unit is Vdc;(3):the parameter is gate-source voltage,the symbol is VGS,the rating is ±20,the unit is Vdc;(4):the parameter is continuous drain current TC=25,the symbol is ID,the rating is 3.2,the unit is Adc;(5):the parameter is continuous drain current TC=100,the symbol is ID,the rating is 2.3,the unit is Adc;(6):the parameter is drain current pulsed,the symbol is IDM,the rating is 24,the unit is Adc;(7):the parameter is gate current pulsed,the symbol is IGM,the rating is ±1.5,the unit is Adc;(8):the parameter is single pulsed avalanche energy,the symbol is EAS,the rating is 183,the unit is mJ;(9):the parameter is avalanche current,the symbol is IAS,the rating is 3.4,the unit is A;(10):the parameter is total power dissipation at TC=25,the symbol is PD,the rating is 40,the unit is Watts;(11):the parameter is total power dissipation derate above 25,the symbol is PD,the rating is 0.32,the unit is W/;(12):the parameter is operating and storage junction temperature range,the symbol is Tj,Tstg,the rating is -55 to 150,the unit is ;(13):the parameter is maximum lead temperature for soldering purposes,1/8 from case for 5 seconds,the symbol is TL,the rating is 300,the unit is .