SS10PH10 Selling Leads, Price trend, SS10PH10 DataSheet download, circuit diagram from SeekIC.com

Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Guardring for overvoltage protection• High Barrier Technology, Tj = 175 °C Maximum• Low leakage current• Meets MSL level 1, per J-STD-020C• Solder Dip 260 °C, 40 second...

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SeekIC No. : 004503066 Detail

SS10PH10: Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Guardring for overvoltage protection• High Barrier Technology, Tj = 175 °C MaximumR...

SS10PH10 Data Sheet

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Part Number:: SS10PH10
Supply Ability:: 5000

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Upload time: 2024/11/8

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Product Details

Description

Features:

• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• High Barrier Technology, T_j = 175 °C Maximum
• Low leakage current
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Application

For use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application.

Specifications

PARAMETER	SYMBOL	SS10PH9	SS10PH10	UNIT
Device marking code		10H9	1010
Maximum repetitive peak reverse voltage	V_RRM	9	10	V
Maximum average forward rectified current (see Fig. 1)	I_F(AV)	10		A
Peak forward surge current 10 ms single half sine-wave superimposed on rated load	I_FSM	2000		A
Non-repetitive avalanche energy at I_AS = 2 A, L = 10 mH, T_j = 25 °C	E_AS	20		mJ
Voltage rate of change (rated V_R)	dv/dt	10000		V/s
Operating junction and storage temperature range	T_J, T_STG	- 55 to + 175		°C

Description

SS10PH9 & SS10PH10 datasheet

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SS10PH10

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