Features: ` Low Forward Voltage.` Low Switching noise.` High Current Capacity` Guarantee Reverse Avalanche.` Guard-Ring for Stress Protection.` Low Power Loss & High efficiency.` 125 Operating Junction Temperature` Low Stored Charge Majority Carrier Conduction.` Plastic Material used ...
SRF20120C: Features: ` Low Forward Voltage.` Low Switching noise.` High Current Capacity` Guarantee Reverse Avalanche.` Guard-Ring for Stress Protection.` Low Power Loss & High efficiency.` 125 Oper...
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Characteristic | Symbol | SRF16 | Unit |
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
120 | V |
RMS Reverse Voltage | VR(RMS) | 84 | V |
Average Rectifier Forward Current Total Device (Rated VR),TC=100 |
IF(AV) | 10 20 |
A |
Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) |
IFM | 20 | A |
Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) |
IFSM | 200 | A |
Operating and Storage Junction Temperature Range | Tj Tstg |
-65 to +125 |
Using the Schottky Barrier principle with a Molybdenum barrier metal. These SRF20120C state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. SRF20120C is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.