Features: * Low Forward Voltage.* Low Switching noise.* High Current Capacity* Guarantee Reverse Avalanche.* Guard-Ring for Stress Protection.* Low Power Loss & High efficiency.* 125 Operating Junction Temperature* Low Stored Charge Majority Carrier Conduction.* Plastic Material used Carries U...
SRF1070: Features: * Low Forward Voltage.* Low Switching noise.* High Current Capacity* Guarantee Reverse Avalanche.* Guard-Ring for Stress Protection.* Low Power Loss & High efficiency.* 125 Operating J...
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Type Number |
Symbol |
SRF10 |
Units | |||
70 | 80 | 90 | 100 | |||
Peak Repetitive Reverse Voltage |
VRRM VRWM VR |
70 | 80 | 90 | 100 |
V |
RMS Reverse Voltage |
VR(RMS) |
49 | 56 | 63 | 70 |
V |
Average Rectifier Forward Current Total Device (Rated VR),TC=100 |
IF(AV) |
10 |
A | |||
Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) |
IFM |
120 |
A | |||
Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) |
IFSM |
125 |
A | |||
Operating and Storage Junction |
TJ , TSTG |
-65 to +150 |
Using the Schottky Barrier principle with a Molybdenum barrier metal. These SRF1070 state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. SRF1070 is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.