Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 110 Watts 1.40/W 200 -65 to 150 11A 50V 50V ...
SQ721: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
110 Watts |
1.40/W |
200 |
-65 to 150 |
11A |
50V |
50V |
20V |
Silicon VDMOS and LDMO Stransistors, SQ721 designed specifically for broadband RF applications.Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others.
"Polyfet" process SQ721 features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.