Features: • Quasi-Resonant Operation• Low-loss, Pulse-Ration-Control standby mode• Under-voltage lockout with Hysteresis• Adjustable switching speed for EMI control• Low start-up circuit current (100uA max)• Active low-pass filter for stabilizing the operation i...
SQ6601PT: Features: • Quasi-Resonant Operation• Low-loss, Pulse-Ration-Control standby mode• Under-voltage lockout with Hysteresis• Adjustable switching speed for EMI control• Lo...
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Characteristic |
Symbol |
Ratings |
Unit |
Note |
Drain Source Voltage |
VDS |
650 |
V |
- |
Drain Current |
ID |
7 |
A |
TC = 25 |
Peak Drain Current |
IDP |
28 |
A |
Single Pulse |
Single Pulsed Avalanche Energy |
EAS |
640 |
mJ |
L=23mH,VDD=100V, IDP=7.0A |
Control Supply Voltage |
VCC |
20 |
V |
- |
FB/OCP Voltage Range |
FB/OCP |
-0.3 ~ +6 |
V |
- |
Power Dissipation |
PD |
40 |
W |
With infinite heatsink |
Thermal Resistance, Junction to Case |
RthJC |
3.12 |
°C /W |
- |
Junction Temperature |
TJ |
150 |
°C |
- |
Operating Temperature Range |
Topr |
-25 ~ +125 |
°C |
- |
Storage Temperature Range |
Tstg |
-55 ~ +150 |
°C |
- |
The SQ6601PT is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feed-back Quasi-Resonant (including low frequency PRC)fly-back converter type SMPS (Switching Mode Power Supply) applications. the SQ6601PT realizes high efficiency, low noise, downsizing and standardizing of a power supply system educing external components count and simplifying the circuit designs. the SQ6601PT is provided in a five pin overmolded TO-220 style package, affording dielectric isolation without compromising thermal characteristics. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).