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Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 30 Watts 7.00 /W 200 -65 to 150 1.8 A 70V 70V ...

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SeekIC No. : 004501602 Detail

SQ201: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...

SQ201 Data Sheet

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Part Number:: SQ201
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunct...

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Description

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
30 Watts	7.00 /W	200	-65 to 150	1.8 A	70V	70V	20V

Description

SQ201, Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others.

"Polyfet"process SQ201 features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.

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