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SQ201

Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 30 Watts 7.00 /W 200 -65 to 150 1.8 A 70V 70V ...

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SQ201: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...

SQ201 Data Sheet

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Part Number:
SQ201
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
30 Watts
7.00 /W
200
-65 to 150
1.8 A
70V
70V
20V





Description

SQ201, Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others.

"Polyfet"process SQ201 features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.






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