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SPW47N60C2

MOSFET N-CH 600V 47A TO-247

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SeekIC No. : 004501476 Detail

SPW47N60C2: MOSFET N-CH 600V 47A TO-247

SPW47N60C2 Data Sheet

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Part Number:
SPW47N60C2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 247
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
47
30
A
Pulsed drain current, tp limited by Tjmax
ID puls
94
Avalanche energy, single pulse
ID= 10A, VDD=50V
EAS
1800
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=20A, VDD=50V
EAR
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
20
A
Reverse diode dv/dt
IS=47A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
dv/dt
6
V/ns
Gate source voltage static
VGS
±20
V
Power dissipation
TC = 25 °C
Ptot
415
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPW47N60C2
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C47A
Rds On (Max) @ Id, Vgs70 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 8800pF @ 25V
Power - Max415W
PackagingTube
Gate Charge (Qg) @ Vgs286nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusRequest Inventory Verification
RoHS StatusRequest Inventory Verification
Other Names SPW47N60C2
SPW47N60C2
SPW47N60C2IN ND
SPW47N60C2INND
SPW47N60C2IN



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